Thermal Stability of the Carbon-Carbon Bond in Ethylene Adsorbed on Si(100): An Isotopic Mixing Study

Abstract

The interaction of ethylene with the silicon surface has been studied in ultrahigh vacuum using a variety of surface science techniques to investigate the surface complex produced and the nature of the high temperature SiC thin film growth process on the Si(100) surface. Recent studies have shown that on a perfect Si(100) surface a single ethane molecule adsorbs on a silicon dimmer (Si2) site at saturation coverage and a surface bonding model has been proposed based on the absence of the C-C bond in this adsorbed species as determined by HREELS.

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Document Details

Document Type
Technical Report
Publication Date
Aug 10, 1989
Accession Number
ADA211591

Entities

People

  • C. C. Cheng
  • J. T. Yates Jr.
  • Wolfgang J. Wolfgang J. Choyke

Organizations

  • University of Pittsburgh

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Alkenes
  • Carbon Carbon Composites
  • Chemical Vapor Deposition
  • Chemistry
  • Collisions
  • Data Acquisition
  • Desorption
  • Films
  • High Temperature
  • Materials
  • Measurement
  • Military Research
  • Molecules
  • Silicon Carbide
  • Spectra
  • Thermal Stability
  • Thin Films

Readers

  • Quantum Chemistry
  • Thin Film Deposition Science.