Reactive Ion Etching of Sputtered Silicon Carbide and Tungsten Thin Films for Device Applications
Abstract
For high temperature processing and device applications, refractory materials, such as silicon carbide (SiC) and tungsten (W), are actively considered or evaluated as the basic semiconductor and metallization materials for future generations of integrated circuits. In order to pattern fine lines in SiC and W thin films, a selective and anisotropic etching technique needs to be developed for future device applications. Therefore, the etching process including basic mechanisms and process requirement have been chosen as the overall research goals of this project. Reactive ion etching (RIE) of SiC thin films in a variety of fluorinated gas plasmas, such as SF6, CBrF3 and CHF3 mixed with oxygen has been investigated in depth. The best anisotropic profile was observed by using CHF3 gas in the RIE mode. A typical DC bias, -300V, is concluded from etching experiments to determine the dependence of SiC etch rate and physical reaction under RIE mode. Reactive ion etching of tungsten (W) thin film has also been investigated by using the different fluorinated gas plasmas, such as CF4, SF6, CBrF3 and CHF3 mixed with oxygen. The obtaining of anisotropic etching profile in W etching has been suggested and the mechanisms have also been studied.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1989
- Accession Number
- ADA211711
Entities
People
- Andrew J. Steck
- Wen-sen Pan
Organizations
- University of Cincinnati