Thermal Model for Double-Drift IMPATT Diodes on Diamond Heat Sinks

Abstract

A thermal model of double-drift IMPATT diodes on diamond heat sinks has been developed. The thermal model approximates the temperature-dependent thermal conductivities of Si and diamond (Type II) by means of simple empirical formulas. The application of the thermal model to three IMPATT diode lits indicates that under life test, junction temperatures are greater than 700 C, while the metal/Si interface temperatures exceed 500 C. An explanation of the failure mechanism is presented. Designs that result in a lower junction temperature are proposed.

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1989
Accession Number
ADA211746

Entities

People

  • Geza Csanky

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Conductivity
  • Current Density
  • Diodes
  • Electronics
  • Equations
  • Equivalent Circuits
  • Failure Mode And Effect Analysis
  • Heat Flux
  • Heat Sinks
  • Heat Transfer
  • Heat Transmission
  • Impatt Diodes
  • Life Tests
  • Mesa Diodes
  • Semiconductor Devices
  • Thermal Conductivity
  • Thermal Resistance

Readers

  • Electronics Engineering
  • Thermal Physics or Thermal Science.
  • Thin Film Deposition Science.