Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (13th) Held in Cabourg, France on 10-12 May 1989

Abstract

This symposium included the following topics: Large area growth of optoelectronic structures in the LP-VPE system; Epitaxial growth on InP substrates etched with methane reactive ion etching technique; InP plasma epitaxy; MOVPE grown heterostructures for monolithic integration; Parameters estimation tool for GaAs MESFET; Two dimensional simulation of the electron diffusion field-effect transistor; Large signal switching model of GaAs MESFETs; Very low noise 0.2 micron GaAs MESFET; Backgating effect sensitivity to material parameters in HEMT structures; Parasitic induced carrier-deconfinement in HFET's as studied by temperature dependent device characterization; HEMT microwave characteristics at low temperatures.

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Document Details

Document Type
Technical Report
Publication Date
May 12, 1989
Accession Number
ADA211848

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Diffraction
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics