Beam Assisted Fabrication of III-V/Si Monolithic Devices
Abstract
The results of a two-year project to explore new methods for deposition of III-V semiconducting film on silicon substrates are summarized. Gas-source molecular beam epitaxy was used for the first time to achieve heteroepitaxy of InP on Si. The InP films contain low concentrations of impurities (< 400 ppb), luminescence under optical excitation, and exhibit high structural quality. Laser-assisted epitaxy was used for selective area growth of GaP and InP on Si using a new phosphorous precursor, and in situ removal of oxide on Si was achieved photochemically. Plasma-assisted chemical vapor deposition of A1N films has been carried out at low substrate temperatures using an electron beam to excite a remote plasma.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1989
- Accession Number
- ADA212046
Entities
People
- Gary Y. Robinson
- George J. Collins
- Raj Solanki
Organizations
- Colorado State University