Electron Transport in Heterojunction Superlattices

Abstract

This is a final report describes briefly three accomplishments in the area of resonant tunneling through double-barrier devices made of GaAs/AL(x) Ga(1-x)As heterostructures. They are: (1) the first experimental demonstration of the importance of many-electron effect in transport through such devices, (2) a self consistent calculation to take into account the space charge effect and thus to extract spectroscopic information from the experimentally measured I-V characteristics, and (3) the first observation of an intrinsic electrical bistability.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1989
Accession Number
ADA212366

Entities

People

  • D. C. Tsui

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Charge Density
  • Conduction Bands
  • Electric Fields
  • Electrical Engineering
  • Electronics
  • Electrons
  • Energy Bands
  • Engineering
  • Heterojunctions
  • Military Research
  • Quantum Tunneling
  • Semiconductors
  • Solid State Electronics
  • Space Charge
  • Superlattices
  • Transport Ships
  • Tunneling

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Space