Optoelectronic Integrated Circuit Technology and Design
Abstract
This is the second annual report from a research program aimed at exploring technology for optoelectronic integration. The primary goal is to develop technologies critical to the evolution of optoelectronic integrated circuits. Results from new dry etching techniques such as radical beam ion beam etching and laser activated etching will be reviewed, as well as progress on a UHV processing chamber being constructed for use with our MBE systems. Process development on vertical-cavity surface-emitting lasers and modulators is presented, with emphasis on the periodic-gain nipi pumping laser structure. Current results on surface-emitting lasers are presented, covering vertical high-Q cavity structures with InGaAs strained-layer quantum wells as well as 45 etched facet structures. Finally, recent work on quantum-well absorption-edge modification using impurity-free disordering techniques is reviewed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1989
- Accession Number
- ADA212380
Entities
People
- A. C. Gossard
- E. L. Hu
- J. L. Merz
- L.A. Coldren
Organizations
- University of California, Santa Barbara