High Speed Quantum-Well Optoelectronic Devices by MBE
Abstract
The work has involved the use of Molecular Beam Epitaxy to grow precisely controlled thin layers of III-V compound semiconductors for applications in high-speed optoelectronics devices. The program was intended to serve as a hardware complement to optical computing and high-speed signal processing systems work funded elsewhere under SDIO. The focus of the work has been on the growth, processing and characterization of novel quantum-confined structures. In the past, such quantum-well or quantum-wire structures had been shown to hold great promise for advanced device applications, but until recently very little of this promise had been fulfilled. Partly as a result of this program, some of the desirable characteristics of such structures have been realized for the first time. For example, the first clear measurements of lateral quantum-confinement in quantum-wire arrays were obtained on layers grown by sub-atomic layer epitaxy on off-axis substrates. The body of work had been concerned with creating and evaluating novel wave guided as well as surface- emitting (transverse) device structures. In both areas, significant advances have resulted as well. Surface-emitting lasers with segmented periodic-gain have led to record low threshold pumping levels.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1989
- Accession Number
- ADA212585
Entities
People
- L.A. Coldren
Organizations
- University of California, Santa Barbara