Strong-Inversion Model of Threshold voltage in Modulation Doped Field Effect Transistors: The role of Unintentional Acceptors

Abstract

A strong-inversion model, in the depletion layer approximation, of the threshold voltage for modulation doped field-effect transistors (MODFETs) has been developed. We show that for a range of unintentional acceptor doping densities from 10 to the 13th power to 10 to the 15th power per cu. cm. in typical molecular beam epitaxy (MBE) -grown structures, threshold voltages may increase by as much as 200 mV. We isolate the contributions of AlGaAs and GaAs to the threshold voltage. We have verified our model by comparing predicted threshold voltages with those measured in typical MBE-grown MODFET structures.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1989
Accession Number
ADA212750

Entities

People

  • R. J. Krantz
  • W. L. Bloss

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Band Structures
  • Charge Density
  • Classification
  • Conduction Bands
  • Electronics
  • Energy Bands
  • Energy Levels
  • Equations
  • Fermi Levels
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Inversion
  • Security
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology