Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films

Abstract

The etching mechanisms for the reactive ion etching of SiC thin films were investigated using fluorinated gases, such as SF6/02, CHF3/02, CBrF3/02. The major mechanisms involved are: (a) physical removal by sputtering due to ionized particles within the plasma, (b) chemical reaction of active plasma species with C and Si with the generation of volatile products. The self-induced DC Bias has been shown to have a very strong effect up to a certain crossover value of around 300V. The effect is related to the rate-limiting removal of the C-rich surface layer. We have confirmed that the chemical reaction process proceeds by removal of Si through reactions with F species (to generate SIF40) while C is removed by reactions with 02 (to generate Cox) only. No reaction between C and F was observed in the experimental results. Keywords: Etching mechanisms, Fluorinated gases, Silicon Carbide, Carbon blocking model. (JES)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1989
Accession Number
ADA213018

Entities

People

  • A. J. Steckl
  • W.-s. Pan

Organizations

  • University of Cincinnati

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Reactions
  • Chemistry
  • Classification
  • Compound Semiconductors
  • Electron Spectroscopy
  • Engineering
  • Films
  • Materials
  • Military Research
  • Reactive Ion Etching
  • Security
  • Silicon
  • Silicon Carbide
  • Spectra
  • Thin Films

Readers

  • Combustion science or combustion engineering.
  • Plasma Physics.
  • Semiconductor Device Technology