Solution of the Hydrodynamic Device Model Using High-Order Non-Oscillatory Shock Capturing Algorithms
Abstract
A micron N+ - N - N+ silicon diode is simulated via the hydrodynamic model for carrier transport. The numerical algorithms employed are for the non-steady case, and a limiting process is used to reach steady state. The novelty of our simulation lies in the shock capturing algorithms employed, and indeed shocks, or very rapid transition regimes, are observed in the transient case for the coupled system, consisting of the potential equation and the conservation equations describing charge, momentum, and energy transfer for the electron carriers. These algorithms, termed essentially non-oscillatory, have been successfully applied in other contests to models the flow in gas dynamics, magnetohydrodynamics and other physical situations involving the conservation laws of fluid mechanics. The method here is first order in time, but the use of small time steps allows for good accuracy. Runge Kutta methods allow one to achieve higher accuracy in time of desired. The spatial accuracy is of high order in regions of smoothness. (JHD)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1989
- Accession Number
- ADA213078
Entities
People
- Emad Fatemi
- Joseph Jerome
- Stanley Osher