Development of High Gain Three Terminal Devices - At Millimeter Wave Frequencies
Abstract
The objectives of this program are: to develop high gain three terminal devices at millimeter wave frequencies. Specifically, InGaAs pseudomorphic high electron mobility transistors (HEMT) will be developed in four key areas: materials, device models, processing, and characterization. The 36 month program consists of two tasks. Task I is to develop the high gain transistor with 6 dB gain, 0.3 W/mm power density, and 20% efficiency at 60 GHz in the first 12 months. Task II is to develop transistor with at least 6 dB of gain, 0.25 W/mm power density and 15% efficiency at 94 GHz and to assess the reliability of the transistor in the next 24 months. (rrh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1989
- Accession Number
- ADA213089
Entities
People
- E. K. Hsieh