Integrated Optoelectronic Receivers
Abstract
Described here is the first phase of a 3-year program for the fabrication of highly sensitive, monolithically integrated optical receivers for fiber optic communication systems operating in the 1.3- to 1.55 micron range. The significant progress in this work has been the growth, by liquid phase epitaxy, of high purity, high uniformity InP(0.53) Ga(0.47). As layers suitable for photodiode and FET applications, fabrication of a very low dark current, low capacitance In(J.53) GaO(0.47) As p-i-n photodiode, identification, and complete analysis of In(0.53) Ga(0.47) As and InP self-aligned JFET structures. The result is that In(0.53) Ga(0.47) As is identified as the material which is preferable for use in integrated receivers, and the fabrication of a discrete In(0.53) Ga(0.47) As JFET. The progress of this research effort should be continued over the next 2 years such that the initial goals of a fully integrated, high sensitivity receiver can be realized. Multimedia report, Naval document.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1989
- Accession Number
- ADA213376
Entities
People
- S. R. Forrest
Organizations
- University of California, San Diego