Interface Phonons in Semiconductor Double Heterostructures

Abstract

Within the framework of the continuum model, the equation of motion for the polarization vector in a semiconductor double heterostructure is solved exactly for the interface phonon modes. Both the eigenvectors and dispersion relations are obtained analytically. It is shown that the slab modes observed in right-angle Raman scattering in a Gallium Arsenides quantum can be understood in terms of the interface modes found in this paper. Keywords: Interface phonons; Semiconductors; Double heterostructures; Dispersion relations; Eigenvectors; Raman scattering.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1989
Accession Number
ADA213732

Entities

People

  • Duoliang Lin
  • R Chen
  • Thomas F. George

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Advanced Electronics
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Chemical Engineering
  • Chemistry
  • Crystal Lattice Vibrations
  • Dispersion Relations
  • Equations
  • Materials
  • Materials Science
  • Military Research
  • New York
  • Raman Scattering
  • Right Angles
  • Scattering
  • Semiconductors
  • Solid State Physics
  • United States

Fields of Study

  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing