UV Photo-Enhanced MOCVD of Cadmium and Cadmium Telluride
Abstract
The work undertaken for this thesis is concentrated in two main areas; the UV photo-enhanced deposition of Cadmium Telluride onto Gallium Arsenide and an investigation of UV photo-deposition of cadmium metal onto various substrates important in semiconductor device applications, namely silicon, gallium arsenide and sapphire. The aims of the project were to investigate the hetero photo-deposition of both materials with a view to promoting low temperature crystallinity. Chapter 2 is a literature review encompassing the MOVPE of II-VI material, the photo-MOVPE of semiconductors, the photodeposition of metals and TEM assessment of some II-VI, III-V heteroepitaxial systems. Chapter 3 describes the MOCVD equipment designed and constructed at Birmingham for the cadmium depositions and highlights the differences between this equipment and that at R.S.R.E utilised for the compound semiconductor growth. Chapter 4 discusses the experimental procedures used in this work and includes specimen preparation and the characterisation techniques used. In chapters 5 and 6 the results of the CdTe and Cd depositions are presented respectively and discussed with reference to earlier relevant work as presented in chapter 2. In the final chapter the major conclusions which can be drawn from the work are presented along with some suggested further work. Great Britain.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1988
- Accession Number
- ADA213824
Entities
People
- Sajad Haq
Organizations
- Royal Signals and Radar Establishment