Development of High Performance Beta-SiC Field effect Transistors
Abstract
On July 20, 1989, Diamond Materials, Inc. (DMI), began work on its SBIR Phase II program entitled 'Development of High-Performance Beta-SiC Field- Effect Transistors.' This program is funded by SDIO/IST and is monitored by the Office of Naval Research. During the first quarter of this program, work has concentrated on designing and installing engineering upgrades to DMI's Beta-SiC reactor. These upgrades include an inverted rotating platen and expansion of the gas control system to handle three different dopant source gases. Additionally, the gas plumbing system has been rebuilt to permit instant turn-on and turn-off of dopant gases in order to make p-n junction and doped/undoped junctions during in situ growth. It is anticipated that growth experiments into the formation of undoped Beta-SiC will begin early in the next quarter. (RRH)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 25, 1989
- Accession Number
- ADA213885
Entities
People
- Richard Koba