Research on Mercury Cadmium Telluride

Abstract

This report summarizes work done during the fourth year of a program entitled, Research on Mercury Cadmium Telluride. Conventional growth of this material has been achieved with plus or minus 0.001 composition control over a 1 dia., using a rotating susceptor. A computer program has been written to evaluate anomalous Hall data. Techniques have been developed to achieve full annealing of these layers. Use of a new Te-alkyl has allowed growth of HgCdTe in the 250-320 C range. Extrinsic p-doping of HgCdTe has been achieved, for the first time, in layers grown by OMVPE. Arsenic has been used as the acceptor, and its presence confirmed by SIMS data and by its stability with heat treatment (15 hours at 205C). Keywords: CdTe; ZnSe; HgCdTe; MCT; Epitaxy; MOCVD; OMVPE.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1989
Accession Number
ADA213924

Entities

People

  • S. K. Ghandhi

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Chemistry
  • Computer Simulations
  • Computers
  • Contracts
  • Diffraction
  • Electron Mobility
  • Engineering
  • Epitaxial Growth
  • Heat Treatment
  • Liquid Phase Epitaxy
  • Low Temperature
  • Military Research
  • New York
  • Partial Pressure
  • Scattering
  • Systems Engineering
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Combustion and Flow Dynamics.
  • Semiconductor Device Technology