Research on GaAs Quantum-Coupled Structures That Can be Used as Electron Devices
Abstract
The objective of this program was to conduct a theoretical and experimental investigation of the physics of quantum coupled semiconductor structures, with the ultimate goal of developing an integrated circuit technology based on quantum coupled devices. The prototype structure on which both the theoretical and experimental efforts were based was the quantum well resonant tunneling diode. The theoretical work answered questions concerning the dc and small signal ac behavior of this device and some very fundamental questions concerning the theory of open quantum system. The theory of open system is a necessary part of the development of quantum device technology because all electron devices are open systems. The experimental part of the program focused on two areas. The first on the behavior of quantum dot structures, which are resonant-tunneling diodes whose lateral dimensions (perpendicular to the direction of current flow) have been reduced to quantum scales by microlithography and etching. The spectroscopy of these structures is explained as revealed in their I-V characteristics. The second area of investigation compared the I-V curves of structurally well -characterized resonant-tunneling diodes to theoretical models. The resonant peak voltage sensitively depended on the precise details of the epitaxial structure. The fitting of the theoretical model to the experimental I-V curve appears to be a more precise way to determine these details than any existing direct technique.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 26, 1989
- Accession Number
- ADA214015
Entities
People
- A. E. Wetsel
- J. N. Randall
- M. A. Reed
- R. J. Aggarwal
- R. J. Matyi
- R. T. Bate
- T. M. Moore
- William R. Frensley
Organizations
- Texas Instruments