Electrochemical Parameterization of Metal Complex Redox Potentials, Using the Ruthenium (III)/Ruthenium(II) Couple to Generate a Ligand Electrochemical Series

Abstract

A ligand electrochemical parameter, El (L), is described to generate a series which may be used to predict M(n)/M(n-1( redox potentials by assuming that all ligand contributions are additive. In this fashion it performs a similar purpose to the Dq parameter in electronic spectroscopy. The parameter is defined as 1/6 that of the Ru(III)/Ru(II) potential for species RuL6 in acetontrile. The El(L) values for over 200 ligands are presented and the model is tested over a wide range of coordination complexes and organometallic species. The redox potential of a M(n)/M(n-1) couple is defined to be equal to:- E(calc) = f Sigma EL (L) + c. The values of f and C, which are tabulated, depend upon the metal and redox couple, and upon spin state and stereochemistry, but, in organic solvents, are generally insensitive to the net charge of the species. Consideration is given to synergism, the potentials of isomeric species, and the situations where the ligand additivity model is expected to fail. In this initial study, the redox couples are restricted almost exclusively to those involving the loss or addition of an electron to the tzg (in Oh) sub-level.

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Document Details

Document Type
Technical Report
Publication Date
Oct 20, 1989
Accession Number
ADA214439

Entities

People

  • Alfred Beverley Philip Lever

Organizations

  • University of York

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Carbonyl Complexes
  • Chemical Engineering
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Coordination Complexes
  • Data Sets
  • Department Of Veterans Affairs
  • Dielectric Gases
  • Engineering
  • Materials Science
  • Organic Chemistry
  • Organic Solvents
  • Spin States

Fields of Study

  • Chemistry

Readers

  • Electrochemical Surface Science

Technology Areas

  • Microelectronics