Minimization of Intermodulation in GaAs MESFET Small-Signal Amplifiers

Abstract

This report examines the dependence of third-order intermodulation distortion on the source reflection coefficient Gamma sub s as a function of frequency, in an amplifier designed according to available-gain criteria. By means of a numerical formulation of the Volterra series, a complete equivalent circuit of the FET can be used, and intermodulation calculations include all feedback effects. The sensitivity of IP3 to Gamma sub s decreases with increasing frequency and can be related to the MESFET's stability. Keywords: Intermodulation distortion; Nonlinear distortion; Volterra series; Field effect transistor amplifier.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1989
Accession Number
ADA214543

Entities

People

  • Andrea M. Crosmun
  • Stephen A. Maas

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Circuits
  • Classification
  • Communication Systems
  • Dynamic Range
  • Equivalent Circuits
  • Feedback
  • Field Effect Transistors
  • Frequency
  • Impedance
  • Intermodulation
  • Measurement
  • Security
  • Sensitivity
  • Space Systems
  • Test Fixtures

Fields of Study

  • Engineering

Readers

  • Electronics Engineering
  • Fluid Dynamics.