VHSIC/VHSIC-Like Reliability Prediction Modeling

Abstract

This report describes a study in which the objective was to develop a reliability prediction model for CMOS VHSIC and VHSIC-Like Devices. Since little field failure rate data is available on these devices, a physics of failure approach was taken in which each failure mechanism was modeled separately. The failure modes/mechanisms modeled were time-dependent dielectric breakdown, electromigration, contamination, hot carrier effects, package related mechanisms, electrical overstress, and a miscellaneous category. Each of the failure mechanisms modeled were derived from life results, screening test results, test structure data, and theoretical considerations. Keywords: Complementary metal oxide semiconductors; Very large scale integrated circuits; Microcircuit; Failure mechanisms; Reliability prediction; Failure rate.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1989
Accession Number
ADA214601

Entities

People

  • Philip Brusius
  • William K. Denson

Organizations

  • IIT Research Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Command And Control
  • Complementary Metal-Oxide Semiconductors
  • Computer Programs
  • Crystal Structure
  • Databases
  • Electronics Industry
  • Environmental Tests
  • Failure Mode And Effect Analysis
  • Information Processing
  • Information Science
  • Integrated Circuits
  • Life Tests
  • Manufacturing
  • Plastic Explosives
  • Statistical Analysis
  • Surveys

Fields of Study

  • Engineering

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.
  • Structural Health Monitoring of Composite Structures.

Technology Areas

  • Microelectronics