The Use of RADFETS in Radiation Dose Measurement: Report on Three Lots Prepared for the U.S. Army

Abstract

The final report describes the preparation of experimental RADFET dosimeters prepared by REM, a UK firm. Samples were delivered to the US Army for testing. The object was the evaluation of the Radiation - Sensitive Field Effect Transistor (RADFET) for use in tactical dosimetry systems. Three lots of the new Type TOT500 quadruple - transistor RADFET design were prepared and preliminary evaluations of each lot were made in the UK. A dose range of 5 to 5000 rads (0. 05 to 50 Gy) is predicted. Special ceramic packages with a reduced amount of gold in the cavity were used. The zero bias mode, which eliminates batteries from tactical dosimeters, was proved to be useful. The prospects of the RADFET as a practical dosimeter look encouraging. Keywords: Silicon; Metal-oxide-semiconductor (MOS); Field effect transistor (FET); Silicon dioxide; Space charge; Gamma rays.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1989
Accession Number
ADA214634

Entities

People

  • Andrew G. Holmes-siedle

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Dose Rate
  • Dosimeters
  • Dosimetry
  • Electrical Measurement
  • Electrical Properties
  • Field Effect Transistors
  • Gamma Rays
  • Heat Treatment
  • Measurement
  • Metal Oxides
  • Oxides
  • Radiation
  • Silicon Dioxide
  • Space Charge
  • Test And Evaluation
  • Transistors
  • X Rays

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Software Engineering
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster