Point Defects and Interfaces in Insulating Solids
Abstract
This contract was the latest phase in a long-standing relationship between ONR and the principal investigators on the experimental and theoretical study of silicon dioxide and the silicon - silicon dioxide interface. During this period we made important contributions towards understanding both bulk silicon dioxide and the interface, which has recently been called 'the most important material system of our era(1)'. We carried out a number of experiments on MOS (metal-oxide-semiconductor) systems. These experiments were designed to study such important features as chlorine incorporation, hydrogen migration, interface trap generation, defect structures associated with fabrication conditions, and hysteresis effects associated with charge trapping at near- interface defects. We carried out theoretical studies on bulk oxide defects, including the peroxyl radical, the non-bridging oxygen hole center, and various E' centers. In the process we took the lead in applying the semiempirical molecular orbital technique MINDO/3 to such defects, which others are now following. Keywords: Tunneling electronics, Silicon, Mathematical models, E centers, Lattice relaxation, Semiconductor-insulator interfaces.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1989
- Accession Number
- ADA214668
Entities
People
- Frank J. Feigl
- W. Beall Fowler
Organizations
- Lehigh University