Interfacial and Thin Film Chemistry in Electron Device Fabrication
Abstract
A. Molecular Beam Epitaxy (MBE) growth and Devices: We have developed and optimized the MBE growth parameters for the polytype InAs/AlSb/GaSb material system. Various device structures based on this material system have been explored and have yielded excellent results. New materials techniques to achieve high performance GaAs charge-coupled devices have been investigated. Use has been made of deep-UV light to enhance the oxidation rate of GaAs and we have found that the Schottky barrier height can be varied over a wide range. B. Laser Surface Interactions: New physical mechanisms for light-induced reactions on semiconductor surfaces have been investigated. A new program on laser etching of SiC has begun. Laser assisted etching of copper was investigated using in situ raman spectroscopy. A new noncontacting method of measuring the properties of space-charge depletion layers at semiconductor surfaces has been developed. C. Fundamentals of Processing Gas/Surface Interactions: Experiments have been performed to study the basic chemical dynamics of chlorine atom/hydrocarbon chemical reactions. Photochemical reactions of molecules adsorbed on surfaces have been investigated. Interfacial chemistry of dry zeolites, porous molecular sieve materials, and aqueous slurries of alumina have been studied. Keywords: Superconductors Photoresists, Heterostructure, Tunneling device, Field effect transistors, Resistive-gate, Photoconductivity, Transition state, Diamond. (aw)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 13, 1989
- Accession Number
- ADA214784
Entities
People
- David H. Auston
- Edward S. Yang
- Eric R. Fossum
- George W. Flynn
- Irving P. Herman
- Nicholas Turro
- Richard M. Osgood, Jr.
- Wen I. Wang
Organizations
- Columbia University