Growth Characteristics and Electronic Behavior of Ultrathin Epitaxial Metallizations

Abstract

A summary of research findings is presented on a project to study the use of Molecular Beam Epitaxy Techniques in metallization of semiconductors such as Gallium Arsenide. Epitaxial metal layers of Niobium and Tantalum have been grown on sapphire and overlayers of Germanium, Gold, Copper and Cobalt have been deposited on (110) and (100) GaAs. The interfacial structure and defects have been studied using x-ray scattering and transmission electron microscopy. (aw)

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Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1989
Accession Number
ADA214794

Entities

People

  • Roy Clarke

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Crystal Structure
  • Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Films
  • High Resolution
  • Metals
  • Microscopy
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Scattering
  • Semiconductors
  • Thin Films
  • Transmission Electron Microscopy
  • X Ray Scattering
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene