Optimization of the Intermodulation Performance of GaAs MESFET Small- Signal Amplifiers

Abstract

Matching conditions that optimize the third-order intermodulation distortion of small-signal MESFET amplifiers, subject to available-gain criteria, are derived. A numerical formulation of the Volterra series is used in conjunction with a complete equivalent circuit of the FET. The sensitivity of IP(3) to gamma (s) decreased with frequency and can be related to the MESFET's stability. (RRH)

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1989
Accession Number
ADA215193

Entities

People

  • Andrea M. Crosmun
  • Stephen A. Maas

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Amplifiers
  • Availability
  • Circuits
  • Classification
  • Corporations
  • Distortion
  • Electronics
  • Equivalent Circuits
  • Field Effect Transistors
  • Frequency
  • Intermodulation
  • Security
  • Sensitivity
  • Space Systems
  • Two Dimensional

Readers

  • Electronics Engineering
  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)