Workshop on Hydrogen Effects in InP and Related Compounds Held in Lannion, France on 24-25 October 1989
Abstract
The use of plasma hydrogenation for decreasing the conductivity of p- type InP by several orders of magnitude has been the object of recent reports. The physical phenomenon involved is the neutralization of electrically active acceptors by the in-diffused hydrogen species with the formation of hydrogen acceptor pairs as detected by infrared vibrational spectroscopy. An obvious application of this effect is the realization of electrical isolation in various electronic and optoelectronic InP-based devices. The BRS laser technology makes use of proton-implantation in order to enhance the output efficiency by reducing the current leaks across the InP/InP homojunction. While proton implantation provides adequate electrical insulation, it is also likely to introduce defects which can act as nonradiative centers. In the present paper we report for the first time the realisation and preliminary characterization of high performance lasers by plasma hydrogenation instead of proton implantation. (jes)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 25, 1989
- Accession Number
- ADA215197