Modeling the Gate I/V Characteristic of a GaAs MESFET for Volterra- Series Analysis

Abstract

This report shows that the Taylor-series coefficients of a FET's gate/drain I/V characteristic, which are used to model the I/V nonlinearity for Volterra-series analysis, can be derived from low-frequency rf measurements of harmonic output levels. The method circumvents many of the problems that occur when dc measurements are used to characterize this nonlinearity. (rrh)

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1989
Accession Number
ADA215314

Entities

People

  • A. M. Crosmun
  • S. A. Maas

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Air Force Facilities
  • Circuit Analysis
  • Circuits
  • Classification
  • Coefficients
  • Computer Programs
  • Corporations
  • Equivalent Circuits
  • Frequency
  • Intermodulation
  • Measurement
  • Resistance
  • Space Systems
  • Spectrum Analyzers
  • Test Fixtures

Readers

  • Adaptive Control and Estimation with Uncertainty in Dynamic Systems.
  • Calculus or Mathematical Analysis
  • Electronics Engineering