AIN Insulator for III-V MIS Applications
Abstract
The development of a generally useful Management Information System technology for III-V semi-conductors could be important for a number of digital and analog circuit applications. To be generally useful, the insulator in the MIS structure should have a high resistivity and a low density of traps; in addition, the insulator/III-V interface must have a low interface state density. A large majority of III-V MIS studies have utilized native oxides as insulating layers in an attempt to mimic the very successful MIS characteristics of the Si/ SiO2 interface. However, the chemical nature of native oxides which form on III- V semiconductors is more complex than SiO2, and it is frequently observed that these oxides are poor insulators, have substantial trap concentrations, and the oxide/III-V interface state densities are unacceptably large. (JES)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1983
- Accession Number
- ADA215347
Entities
People
- K. R. Elliott
- W. Grant