Structural Instabilities, Impurities and Defects in Electronic Materials
Abstract
The research performed under this contract includes several topics . The first topic is an examination of defects and impurities in III-V binary, ternary and quaternary semiconducting films made by the organometallic vapor phase epitaxial (OMVPE) technique. The second topic is an investigation of III-V multilayers and quantum well structures. A third topic is an investigation of photo-induced structural changes in amorphous semiconductors. All three topics utilized optical and magnetic resonance techniques included electron spin resonance (ESR), nuclear magnetic resonance (NMR), optically-pumped NMR and ESR, optically detected magnetic resonance (ODMR), photoluminescence (PL), optical absorption and various modulated optical spectroscopies such as thermally modulated PL. Recent interest in strained-layer superlattices and quantum wells has been motivated by their potential for high-speed devices. Our PL measurements have demonstrated a useful diagnostic technique to measure critical thicknesses in strained layer heterostructures. Our thermally modulated photoluminescence measurements on InP/GaInAs/InP single quantum wells where the well widths are as small as about 3 have demonstrated this trend for the first time. The PIn antisite in InP was first identified by ESR. Keywords: Indium gallium arsenides, Gallium arsenide, Exciton binding energies. (AW)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1989
- Accession Number
- ADA215384
Entities
People
- P. C. Taylor
Organizations
- University of Utah