Superconducting Electronic Film Structures
Abstract
Solid state epitaxial growth of NbN single crystals have now been achieved on (1, -1,0,2) sapphire. Results indicate that surface preparation is the most critical factor in obtaining epitaxy. Films of V-Si and Nb-Ge have been reactively magnetron sputtered and the A15 phase has been obtained at temperatures as low as 290 C, approximately 150 C lower than with dc diode reactive sputtering. A LEED study of Nb3Ir single crystal epitaxial substrates lead to in-situ surface processing procedure and showed that surface reconstruction is caused by oxygen impurity. Epitaxial, single crystal Nb films have been prepared on sapphire and MgO substrates. A glancing angle XPS study of A12O3 tunnel barriers and extremely thin amorphous Mo-Ge films demonstrated universality of significant thickness variation that affects tunnelling characteristics. (rrh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 24, 1984
- Accession Number
- ADA215477
Entities
People
- A. I. Braginski
- J. R. Gavaler