Chemical Profiling of Silicon Nitride Structures

Abstract

X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) have been used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal-nitride-oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor-on- insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface. Keywords: Spectroscopy; Nitridation. (edc)

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1989
Accession Number
ADA215643

Entities

People

  • R. P. Vasquez

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Charge Density
  • Chemical Reactions
  • Detectors
  • Dielectric Films
  • Diffusion Coefficient
  • Electrical Properties
  • Jet Propulsion
  • Kinetic Energy
  • Materials Laboratories
  • Measurement
  • Metal Nitride Oxide Semiconductors
  • Optical Materials
  • Oxidation
  • Physical Properties
  • Very Large Scale Integration
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene