Excited State Lifetime Measurements of Ytterbium in Indium Phosphide.
Abstract
The AFIT Time Resolved Photoluminescence (TRPL) lab was disassembled, relocated and rebuilt with improvements to layout and performance. Excited state lifetime measurements of ytterbium implanted in indium phosphide were conducted using the new lab. Effects of sample temperature, rapid thermal annealing (RTA) time and RTA temperature on the lifetimes of the 1.002 microns Yb3+ line were examined. Lifetime measurements of Er, Pr and Tm in GaAs were also attempted. Ytterbium concentrations were 3 X 10 to the 13th power ions/sq. cm., implanted at an ion energy of 1 MeV in semi-insulating InP substrate. Sample temperatures ranged from 4.2-90K. Annealing times ranged from 1 to 25 seconds on samples annealed at 850 C. Annealing temperatures ranged from 400 to 850 C, with RTA times of 15 seconds. The excitation source was a nitrogen-pumped dye laser with primary wavelength at 580 nm. A germanium photodiode detector was selected to eliminate the long time constant associated with available S1 power supplies and to enable detection at the near infrared wavelengths of the other rare earths. Data acquisition was accomplished with a boxcar averager and a microcomputer equipped with acquisition hardware and software. Thermal quenching was clearly observed in lifetimes at increasing sample temperatures, most dramatically at above 50 C. The results would be very helpful in device fabrication/operation considerations, and some of the sample preparation parameters may be equally applicable for other RE doped III-V semi-conductors. Theses. (AW)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1989
- Accession Number
- ADA215709
Entities
People
- David Desrocher
Organizations
- Air Force Institute of Technology