Selective Excitation Luminescence and Photoluminescence Investigations of Ytterbium Doped InP, GaAs and A1GaAs
Abstract
Group III-V semiconductors doped with rare earth (RE) elements produce sharp emissions that would be ideally suited to Air Force optoelectronic applications. The sharp emissions are due to the intra-4f transitions of the triply ionized Re atom that are partially shielded from the crystal lattice potential by the outer lying 5s and 5p electrons. In this work the Re element ytterbium (Yb) was implanted into bulk grown InP, vapor phase epitaxial (VPE) grown InP, GaAs, and Al(x)Ga(1-x)As with x = .15, .23 and .30. The samples were annealed using rapid thermal annealing (RTA) or conventional furnace annealing (CFA) for a range of temperatures and times. The study of bulk InP:Yb evaluated the emission spectra intensity as a function of temperature and excitation energy. Temperatures from 2.8K to 90K and energies from 1.38 eV to 1.495 eV were used. The results of this analysis confirm that the majority of the Yb related spectra is from only one luminescent center. Theses. (rrh)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1989
- Accession Number
- ADA215713
Entities
People
- Michael L. Eastman
Organizations
- Air Force Institute of Technology