Density of Electronic States in a Biased Resonant Tunneling Structure

Abstract

We calculate the change in the density of states due to a biased resonant tunneling structure. The maximum of the density of states near resonance gets shifted towards the low-energy side compared to the unbiased case, as is the transmission coefficient, although the two need not be identical. For the case of asymmetric barrier heights, the left-right symmetry of the density states is broken when the field is non-vanishing. Keywords: Quantum wells; Electronic states; Resonant tunneling; Biased; Transmission coefficient.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1989
Accession Number
ADA215735

Entities

People

  • D. Sahu
  • L. N. Pandey
  • Thomas F. George

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Chemical Engineering
  • Chemistry
  • Coefficients
  • Electric Fields
  • Electronic States
  • Energy Levels
  • Engineering
  • Materials
  • Materials Science
  • Military Research
  • New York
  • North Carolina
  • Resonance
  • Symmetry
  • United States
  • Wave Functions

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing