Luminescence of Lanthanides and Actinides Implanted into Binary III-V semiconductors and AlGaAs

Abstract

Through luminescence experiments it was observed that lanthanides, or rare earths, and also actinides, may be successfully introduced into binary and ternary III-V Group semiconductors. The study supports the feasibility of producing infrared light emitting diodes (LEDs) for the 0.9 to 1.7 micron spectral range. Besides systematic spectral characterization through photoluminescence, excitation mechanisms and decay kinetics were also investigated. Ytterbium (Yb), erbium (Er), thulium (Tm), praseodymium (Pr), and uranium (U) were successfully implanted into GaAs, InP, GaP, AlAs, or AlGaAs as observed through photoluminescence and also verified by secondary ion mass spectrometry (SIMS). The impurities were implanted through high (1 MeV), intermediate (380, 390 keV), and low (140 keV) energy standard and nonstandard implantation methods, followed by post-implantation annealing using both rapid thermal and conventional furnace annealing. Details on the implantation techniques are given and implantation statistics were determined. Theses. (rrh)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1989
Accession Number
ADA215759

Entities

People

  • Gernot S. Pomrenke

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Actinides
  • Computer Programs
  • Crystal Structure
  • Dye Lasers
  • Electronics Industry
  • Energy Bands
  • Laser Beams
  • Lasers
  • Liquid Dye Lasers
  • Mass Spectrometry
  • Measurement
  • Optical Properties
  • Optoelectronic Devices
  • Semiconductor Devices
  • Semiconductors
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics