Finite Element Modeling and Thermal Simulations of Transistor Integrated Circuits

Abstract

This report documents finite element thermal simulations of the driver amplifier of a C-band transmit/receive radar module currently under life test at the Rome Air Development Center. Steady state and transient finite element thermal simulations were performed to determine the temperature distribution within the gate regions of the transistor cells of a gallium arsenide chip. Other accomplishments include identification of the proper finite element modeling procedures and techniques and investigation of correlating infrared thermal measurements with finite element analytical results. (RRH)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1989
Accession Number
ADA215928

Entities

People

  • William J. Bocchi

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Amplifiers
  • C Band
  • Field Effect Transistors
  • Finite Element Analysis
  • Heat Energy
  • Heat Transfer
  • Heat Transmission
  • Infrared Detectors
  • Integrated Circuits
  • Measurement
  • Metals
  • Millimeter Waves
  • Peak Values
  • Temperature Gradients
  • Thermal Conductivity
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Engineering

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology
  • Structural Dynamics.

Technology Areas

  • Microelectronics