Development of a Ge/GaAs HMT (High Mobility Transistor) Technology Based on Plasma-Enhanced Chemical Vapor Deposition

Abstract

The following report conveys the progress made during the first quarterly period, from January 1, 1989 to March 31, 1989 for ONR Contract number N-00014-86-C-0838. During this quarter, the work has primarily focused on the epitaxy of Ge on GaAs. The achievements, with regards to the insitu cleaning of Ge and GaAs surfaces, are discussed. The results of Ge homoepitaxy case which has been used as a vehicle for the optimization of the Ge/GaAs heteroepitaxy are discussed. We have studied the effects of adding hydrogen to the reagent gas mixture in an attempt to improve the mobilities of the Ge atoms on the surface. An additional aspect of the program addressed in this quarter has been the study of sub-cutaneous oxidation and its relevance to the gating of Ge.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1989
Accession Number
ADA216077

Entities

People

  • G. G. Fountain
  • G. Lucovsky
  • John B. Posthill
  • Robert J. Markunas
  • Ronald A. Rudder
  • S. V. Hattangady

Organizations

  • RTI International

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Classification
  • Dilution
  • Elements
  • Epitaxial Growth
  • Films
  • Hydrogen
  • Materials
  • Materials Science
  • Military Research
  • North Carolina
  • Oxides
  • Security
  • Semiconductors
  • Triangles
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

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