Investigation of Low Temperature Multilevel Dielectrics for Application for Radiation Tolerant, Submicron-Scaled IC Technology
Abstract
During this quarter work has proceeded in mapping out the nitride deposition parameter space. The new ultra high purity reactor is on line and in use. Nitride results show a 2 order of magnitude improvement. A great deal of effort has been put into characterization of the remote plasma enhanced nitride deposition process using N(2) as the nitrogen source. The data vase includes deposition conditions and characterizations of the deposited films. The deposition variables include temperature, pressure, and gas flow rates. The characterizations include deposition rate, etch rate, refractive index (from elipsometry), dielectric constant, infrared data, flatband shift, and hydrogen content. This data base allows correlation of data according to any combination of parameters in the data base. This function can be used to verify the possibility of improbability of various suspected correlations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1989
- Accession Number
- ADA216078
Entities
People
- G. G. Fountain
- G. Lucovsky
- J. A. Hutchby
- Robert J. Markunas
- S. V. Hattangady
Organizations
- RTI International