Development of a Ge/GaAs HMT (High Mobility Transistor) Technology Based on Plasma Enhanced Chemical Vapor Deposition

Abstract

The following report details the progress on ONR contract number N00014-86-C-0838 during the period from April 1 to June 30, 1989. This program is targeted at development of a Ge on GaAs High Mobility Transistor (HMT) technology. During this quarter, the work has focused on 2 areas. The first area described involves the effect of the Si deposition parameters on the electrical characteristics of the composite Ge-pseudomorphic Si-SiO2 MIS structure. Complementary n and p type Ge MIS structures are presented which exhibit low midgap Dit values. The second area described involves the fabrication of Ge MISFET devices using the pseudomorphic Si-SiO2 gate insulator. These n-channel transistors exhibit a transconductance of 24 mS/mm at a gate length of 2 microns.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1989
Accession Number
ADA216079

Entities

People

  • G. G. Fountain
  • G. Lucovsky
  • John B. Posthill
  • Robert J. Markunas
  • Ronald A. Rudder
  • S. V. Hattangady

Organizations

  • RTI International

Tags

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Carrier Mobility
  • Chemical Vapor Deposition
  • Classification
  • Composite Materials
  • Contracts
  • Dielectrics
  • Elements
  • Fabrication
  • Field Effect Transistors
  • Materials
  • Materials Processing
  • Military Research
  • Mobility
  • Transconductance
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene