Development of a Ge/GaAs HMT (High Mobility Transistor) Technology Based on Plasma Enhanced Chemical Vapor Deposition
Abstract
This program is targeted at development of a Germanium on Gallium Arsenide High Mobility Transistor (HMT) technology. Work during this quarter has focused on development of the n channel Metal Insulator Semiconductor-Field Effect Transistor fabrication process. Two different FET processes have been implemented. One process uses a blanket implant and etched source drain mesas. The other process uses selectively implanted source and drain regions. In the case of the blanket implanted wafer, we have found that anomolous diffusion of the implanted phosphorus led to difficulty in isolating the source drain regions. The use of the selective implant process has solved the isolation problem. The results of the etched mesa FETs were described in the previous quarterly reports. This quarterly report discusses the results of the selectively implanted source drain FETs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1989
- Accession Number
- ADA216080
Entities
People
- G. G. Fountain
- John B. Posthill
- Robert J. Markunas
- Ronald A. Rudder
- S. V. Hattangady
Organizations
- RTI International