Investigation of Low Temperature Multilevel Dielectrics for Application for Radiation Tolerant, Submicron-Scaled IC Technology

Abstract

The following report details the progress on ONR contract number N00014-86-C-0421 during the period from July 1, 1989 to September 30, 1989. This program entails a joint effort between Research Triangle Institute and North Carolina State University. The Gen 2 remote plasma reactor system is on line at RTI. Work has begun in this system on the deposition of oxide, nitride, and oxide nitride oxide MOS structures. Enhancement mode n-channel MOSFETs have been fabricated using an all-low temperature process (<600 C).

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Document Details

Document Type
Technical Report
Publication Date
Oct 15, 1989
Accession Number
ADA216081

Entities

People

  • D. V. Tsu
  • G. G. Fountain
  • G. Lucovsky
  • J. A. Hutchby
  • Robert J. Markunas
  • S. S. Kim
  • S. V. Hattangady

Organizations

  • RTI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitors
  • Classification
  • Contracts
  • Dielectrics
  • Films
  • Hypervelocity Flow
  • Low Temperature
  • Materials
  • Measurement
  • Military Research
  • Nitrides
  • North Carolina
  • Oxide Films
  • Oxides
  • Radiation
  • Teamwork
  • Triangles

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.