An Overview of Radiation-Induced Interface Traps in MOS (Metal-Oxide Semiconductor) Structures
Abstract
We focus on radiation-induced interface traps, describing first how they fit into the overall radiation response of metal-oxide semiconductor (MOS) structures. Detailed measurements of the time-, field-, and temperature- dependences of the buildup of radiation-induced interface traps indicate three processes by which the buildup occurs. The largest of these is the slow two- stage process described by McLean and coworkers, which is rate limited by the hopping transport of hydrogen ions. Two other faster processes also contribute small interface trap buildups in gate oxides. The processes seem to be controlled by hole transport to the Si/SiO2 interface and by neutral hydrogen diffusion, respectively. We also discuss several models which fall into three classes, corresponding roughly to the three processes observed experimentally. Other topics discussed briefly are dose dependence, field oxide effects, chemical and processing dependences, and scaling effects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1989
- Accession Number
- ADA216101
Entities
People
- F. B. Mclean
- H. E. Boesch Jr.
- James M. Mcgarrity
- Timothy R. Oldham
Organizations
- Harry Diamond Laboratories