Investigation of Low Temperature Multilevel Dielectrics for Application for Radiation Tolerant, Submicron-Scaled IC Technology
Abstract
The following report details the progress on ONR contract number N- 00014-86-C-0421 during the period from January 1 to March 31, 1989. This program entails a joint effort between Research Triangle Institute and North Carolina State University. During this quarter we have made a preliminary comparison of SiO2 deposited at 1.1 to 1.2 nm per minute and 0.16 to 0.18 nm per minute, both at low pressure. An investigation has been carried to look at the effect of the extension of the glow discharge region using a grounded vs. floating grid between the plasma tube and the sample to control the extent of the plasma.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1989
- Accession Number
- ADA216114
Entities
People
- G. G. Fountain
- G. Lucovsky
- J. A. Hutchby
- Robert J. Markunas
- S. V. Hattangady
Organizations
- RTI International