Molecular Beam Epitaxy for Combined Optical and Electronic Circuits

Abstract

This is a final report on the purchase and installation of a Molecular Beam Epitaxial (MBE) Deposition Machine. Additional funds were provided by the National Science Foundation, by USCD intramural contributions and by the Powell (private) foundation for a total of $471,000. The machine presently in operation is a modified Varian Associates Gen.II Machine without the low energy electron diffraction and without the Auger surface spectrometer.

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Document Details

Document Type
Technical Report
Publication Date
Dec 24, 1984
Accession Number
ADA216537

Entities

People

  • H. H. Wieder

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Air Force
  • California
  • Circuits
  • Crystals
  • Detection
  • Electrical Engineering
  • Electronic Circuits
  • Engineering
  • Field Effect Transistors
  • Gallium
  • Gallium Arsenides
  • Integrated Circuits
  • Micrometers
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Single Crystals
  • Universities

Readers

  • Military History of the United States in the 20th Century.
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics