Indium Phosphide Speeds Past GaAs

Abstract

Now that the limits of GaAs are being reached, the emerging technology of indium phosphide (InP) and its related alloys, such as InGaAs and InAlAs, are further extending the limits of solid-state capabilities in a range of areas from extra-high frequency (EHF) power and photonics to energy conversions applications to a host of military systems. Keywords: Semiconductor technology; Electrooptics; Electronics; Power misfet; Reprints; Indium phosphide; Millimeter wave; Monolithic.

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Document Details

Document Type
Technical Report
Publication Date
Jul 17, 1989
Accession Number
ADA216608

Entities

People

  • Louis J. Messick

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Amplifiers
  • Artificial Satellites
  • Bipolar Junction Transistors
  • Circuits
  • Emerging Technology
  • Field Effect Transistors
  • Frequency
  • Materials
  • Millimeter Waves
  • Optoelectronic Devices
  • Photonics
  • Radiation
  • Semiconductors
  • Solar Cells
  • Transistors
  • X Band

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • 5G - DoD 5G Program
  • 5G - Internet of Things
  • Microelectronics