Surface Intermediates in Thin Film Deposition on Silicon
Abstract
This project examined the fundamental processes of surface reactions using infrared spectroscopy. The novelty of this project was the development of a dynamic infrared spectroscopic technique capable of following reaction dynamics on well defined single crystal surfaces. The dynamic infrared technique was applied to two experiments. The first experiment was used to follow single shot experiments: the technique was used to follow thermally induced reactions using temperature programmed reflection absorption infrared spectroscopy (TPRAIS). The second experiment is to follow dynamics of repetitive processes combining modulated molecular beams with reflection infrared. This has been demonstrated for simple adsorption desorption of CO on Pt; difficulties in achieving proper conditions for film growth have precluded the application to film deposition, but we are continuing to pursue this problem.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 28, 1989
- Accession Number
- ADA216662
Entities
People
- Jay B. Benziger
Organizations
- Princeton University