Superconducting Thin Films, Composites and Junctions

Abstract

The important issue of how the superconducting transition temperature T(c) in disordered systems changes near the M-I transition where strong localization (k(F)1 approx. 1) as expected has been studied in the Mo-Ge system. In the high Mo concentration, which is in the weakly localized regime, T(c) decreases linearly with decreasing Mo concentration from 7.5 K (78 at.% Mo) at a rate of approx. 0.18 K/at.% Mo. In this region the ratio of electron-phonon coupling constant gamma to the bare density of states N(b)(O) is constant, which is consistent with the Varma-Dynes tight-binding model. An extrapolation of the linear behavior of T(c) in this regime yields the disappearance of T(c) near 35 at.% Mo. However, measurements show that T(c) exists down to 13.5 at.% Mo. A non-superconducting metallic phase is found to exist between 13.5 at 10.4 at.% Mo at which concentration the insulated phase occurs.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1985
Accession Number
ADA216688

Entities

People

  • Theodore H. Geballe

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Contracts
  • Current Density
  • Dielectrics
  • Epitaxial Growth
  • Films
  • Germanium Alloys
  • Instrumentation
  • Ion Beams
  • Ion Sources
  • Low Temperature
  • Materials
  • Materials Science
  • Thin Films
  • Transition Temperature
  • Transitions

Fields of Study

  • Physics

Readers

  • Educational Psychology
  • Materials Science and Engineering.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene