Crystal Growth and Mechanical Properties of Semiconductor Alloys
Abstract
We describe a study of the mechanical properties and crystal growth of compound semiconductor alloys. We also investigated experimental conditions that may influence the hardness values and, hence, might explain the large variations in hardness values that are described in literature for many semiconductors, specifically the following: 1) differences in the hardness of different grains, across twins, and as the sample is rotated that may rise from crystal orientation affects; 2) differences in hardness arising from the photoplastic effect; and 3) differences in hardness arising from differences in applied loads during hardness testing. We propose to continue this work by: 1) expanding our study a wider range of composition of ZnTe-CdTe superlattices; 2) investigating both strained layer and lattice matched superlattices of InGaAsP; 3) investigating superlattices of Si and Ge; and 4) investigating creep in HgTe and other semiconductors of relatively low melting temperatures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1989
- Accession Number
- ADA216697
Entities
People
- David. A. Stevenson
Organizations
- Stanford University