Transport Effects and Spectroscopy of Defects in Microstructures

Abstract

Microstructures were studied in the presence of generalized defects, both point repulsive potentials and slit openings in barriers. A number of transport effects were discovered. For isolated defects a resonance was found to occur at the threshold energies of a quantum well. A scaling relation was found for scatterers near single barriers. A rich spectrum of effects was found for single defects near and within double-barrier structures. The electronic analogue of single slit diffraction was shown to exhibit high fringe visibilities. (jhd)

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Document Details

Document Type
Technical Report
Publication Date
Dec 20, 1989
Accession Number
ADA216718

Entities

People

  • Alfred M. Kriman

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Conformal Mapping
  • Current Density
  • Electron Density
  • Electron Diffraction
  • Electron Energy
  • Electron Gas
  • Electronics
  • Electrons
  • Field Effect Transistors
  • Physics
  • Probability
  • Resonant Tunneling Diodes
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Transistors
  • Tunnel Diodes

Fields of Study

  • Materials science
  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing